BFQ591 datasheet(1/4 Pages) ISC

부품명	BFQ591

상세설명	isc Silicon NPN RF Transistor

PDF	4 Pages

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제조업체	ISC [Inchange Semiconductor Company Limited]

홈페이지	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc RF Product Specification

isc Silicon NPN RF Transistor

BFQ591

DESCRIPTION

·High Power Gain

·High Current Gain Bandwidth Product

·Low Noise Figure

APPLICATIONS

·Designed for use in MATV or CATV amplifiers and RF

communications subscribers equipment.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

20

V

VCEO

Collector-Emitter Voltage

15

V

VEBO

Emitter-Base Voltage

3

V

IC

Collector Current-Continuous

200

mA

PC

Collector Power Dissipation

@TC=25℃

2.25

W

TJ

Junction Temperature

175

℃

Tstg

Storage Temperature Range

-65~150

℃

isc Website：www.iscsemi.cn

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BFQ591 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited

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