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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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2SA985 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SA985 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page  Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA985 2SA985A CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2SA985 -120 V(BR)CEO Collector-emitter breakdown voltage 2SA985A IC=-25mA ,IB=0 -150 V VCEsat Collector-emitter saturation voltage IC=-1A; IB=-0.1A -0.3 -2.0 V VBEsat Base-emitter saturation voltage IC=-1A; IB=-0.1A -0.9 -1.5 V ICBO Collector cut-off current VCB=-120V; IE=0 -1.0 μA IEBO Emitter cut-off current VEB=-3V; IC=0 -1.0 μA hFE-1 DC current gain IC=-5mA ; VCE=-5V 35 hFE-2 DC current gain IC=-0.3A ; VCE=-5V 60 150 320 COB Output capacitance IE=0 ; VCB=-10V,f=1MHz 29 pF fT Transition frequency IC=-0.2A ; VCE=-5V 180 MHz hFE-2 Classifications R Q P 60-120 100-200 160-320 2 |
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