| 전자부품 데이터시트 검색엔진 |
|
2SC3552 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited |
|
|
|||||||||||||||||||||||||||||
2SC3552 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited |
|
2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3552 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; RBE= ∞ 800 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 7 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 1100 V VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.2A B 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 1.2A B 1.5 V ICBO Collector Cutoff Current VCB= 800V ; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 5V ; IC= 0 10 μA hFE-1 DC Current Gain IC= 0.8A ; VCE= 5V 10 40 hFE-2 DC Current Gain IC= 4A ; VCE= 5V 8 COB Output Capacitance IE= 0; VCB= 10V; ftest=1.0MHz 215 pF fT Current-Gain—Bandwidth Product IC= 0.8A ; VCE= 10V 15 MHz Switching Times ton Turn-on Time 0.5 μs tstg Storage Time 3.0 μs tf Fall Time IC= 8A , IB1= 1.6A; IB2= -3.2A RL= 500Ω; VCC=400V 0.3 μs hFE-1 Classifications K L M 10-20 15-30 20-40 isc Website:www.iscsemi.cn 2 |
|
|
링크 URL |
| ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크 투 데이터시트 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |