| 전자부품 데이터시트 검색엔진 |
|
2SC1907 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited |
|
|
|||||||||||||||||||||||||||||
2SC1907 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited |
|
2 / 4 page ![]() INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC1907 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 10μA ; IE= 0 30 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 3mA ; RBE= ∞ 19 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 10μA ; IC= 0 2 V VCE(sat) Collector-Emitter Saturation Voltage IC= 20mA ; IB= 4mA 1.0 V ICBO Collector Cutoff Current VCB= 10V; IE= 0 0.5 μA hFE DC Current Gain IC= 10mA ; VCE= 10V 40 fT Current-Gain—Bandwidth Product IC= 10mA ; VCE= 10V 900 1100 MHz COB Output Capacitance IE= 0 ; VCB= 10V;f= 1.0MHz 1.0 2.0 pF rbb’ • CC Base Time Constant VCB= 10V,IC = 10 mA,f = 31.8 MHz 10 25 ps Pout Oscillation Output Power VCB = 10 V,IC = 10mA;f = 930MHz 8 mW isc Website:www.iscsemi.cn 2 |
|
|
링크 URL |
| ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크 투 데이터시트 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |