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2SA1659 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited

부품명 2SA1659
상세설명  isc Silicon PNP Power Transistor
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제조업체  ISC [Inchange Semiconductor Company Limited]
홈페이지  http://www.iscsemi.cn
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INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
2SA1659
DESCRIPTION
·High Collector-Emitter Breakdown Voltage
VCEO= -160V(Min)
·Complement to Type 2SC4370
·Full-mold package that does not require an insulating
board or bushing when mounting.
APPLICATIONS
·Designed for high voltage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-160
V
VCEO
Collector-Emitter Voltage
-160
V
VEBO
Emitter-Base Voltage
-5.0
V
IC(DC)
Collector Current(DC)
-1.5
A
IB(DC)
Base Current
-0.15
A
PC
Collector Power Dissipation
@TC=25℃
20
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150
℃
isc Website：www.iscsemi.cn


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