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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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2SA1232 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SA1232 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page  Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1232 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=-5A; IB=-0.5A -0.6 -1.5 V VBEsat Base-emitter saturation voltage IC=-5A; IB=-0.5A -1.3 -2.0 V ICBO Collector cut-off current VCB=-130V; IE=0 -50 μA IEBO Emitter cut-off current VEB=-3V; IC=0 -50 μA hFE-1 DC current gain IC=-2A ; VCE=-5V 60 320 hFE-2 DC current gain IC=-5A ; VCE=-5V 40 Cob Output capacitance IE=0 ; VCB=-10V;f=1MHz 250 pF fT Transition frequency IC=-1A ; VCE=-5V 60 MHz hFE-1 Classifications R Q P 60-120 100-200 160-320 2 |
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