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2SA1383 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SA1383 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1383 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ,IB=0 -180 V VCEsat Collector-emitter saturation voltage IC=-50mA; IB=-5mA -0.5 V VBEsat Base-emitter saturation voltage IC=-50mA; IB=-5mA -1.5 V ICBO Collector cut-off current VCB=-180V; IE=0 -1.0 μA IEBO Emitter cut-off current VEB=-3V; IC=0 -1.0 μA hFE-1 DC current gain IC=-1mA ; VCE=-5V 90 hFE-2 DC current gain IC=-10mA ; VCE=-5V 100 320 COB Output capacitance IE=0 ; VCB=-10V;f=1MHz 4.5 pF fT Transition frequency IC=-20mA ; VCE=-10V 180 MHz hFE-2 Classifications Q P 100-200 160-320 2 |
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