| 전자부품 데이터시트 검색엔진 |
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2SA1513 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SA1513 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1513 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-25mA; IB=0 -60 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA; IC=0 -6 V VCEsat Collector-emitter saturation voltage IC=-12 A;IB=-0.6 A -0.5 V VBEsat Base-emitter saturation voltage IC=-12 A;IB=-0.6 A -1.5 V ICBO Collector cut-off current VCB=-60V; IE=0 -10 μA IEBO Emitter cut-off current VEB=-6V; IC=0 -10 μA hFE DC current gain IC=-3A ; VCE=-2V 100 400 COB Output capacitance IE=0 ; VCB=-10V;f=1MHz 300 pF fT Transition frequency IC=-1.5A ; VCE=-10V 80 MHz 2 |
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