| 전자부품 데이터시트 검색엔진 |
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D44Q3 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited |
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D44Q3 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors D44Q1/3/5 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT D44Q1 125 D44Q3 175 VCEO(SUS) Collector-Emitter Sustaining Voltage D44Q5 IC= 10mA ;IB= 0 B 225 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A B 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.2A B 1.3 V D44Q1 VCB= 200V;IE= 0 10 D44Q3 VCB= 250V;IE= 0 10 ICBO Collector Cutoff Current D44Q5 VCB= 300V;IE= 0 10 μA hFE-1 DC Current Gain IC= 0.2A ; VCE= 10V 30 hFE-2 DC Current Gain IC= 2A ; VCE= 10V 20 fT Current-Gain—Bandwidth Product IC= 0.1A; VCE= 10V 20 MHz COB Output Capacitance IE= 0; VCB= 10V; f= 1MHz 32 pF Switching Times ton Delay Time 0.4 μs tstg Storage Time 5 2.0 μs tf Fall Time VCC= 50V IC= 1A; IB1= -IB2= 0.1A 1.7 μs isc Website:www.iscsemi.cn 2 |
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