| 전자부품 데이터시트 검색엔진 |
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MJ11013 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited |
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MJ11013 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Website:www.iscsemi.cn isc Silicon PNP Darlington Power Transistor MJ11013 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -0.1A; IB= 0 -90 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -20A; IB= -0.2A -3.0 V V CE(sat)-2 Collector-Emitter Saturation Voltage IC= -30A; IB= -0.3A -4.0 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= -20A; IB= -0.2A -3.5 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= -30A; IB= -0.3A -5.0 V ICER Collector Cutoff Current VCE=-90V; RBE=1kΩ VCE=-90V; RBE=1kΩ; TC=150℃ -1.0 -5.0 mA ICEO Collector Cutoff Current VCE= -50V; IB= 0 -1.0 mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -5.0 mA hFE-1 DC Current Gain IC= -20A, VCE= -5V 1000 hFE-2 DC Current Gain IC= -30A, VCE= -5V 200 |
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