BUX41 datasheet(2/2 Pages) ISC

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

BUX41

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= 200mA ; IB= 0, L= 25mH

200

V(BR)EBO

Emitter-Base Breakdown Voltage

IE= 50mA; IC= 0

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= 5A; IB= 0.5A

1.2

VCE(sat)-2

Collector-Emitter Saturation Voltage

IC= 8A; IB= 1A

1.6

VBE(sat)

Base-Emitter Saturation Voltage

IC= 8A; IB= 1A

2.0

ICEO

Collector Cutoff Current

VCE= 160V; IB= 0

1.0

ICEX

Collector Cutoff Current

VCE= 250V; VBE= -1.5V

VCE= 250V; VBE= -1.5V; TC= 125℃

1.0

5.0

IEBO

Emitter Cutoff Current

VEB= 5V; IC=0

1.0

hFE-1

DC Current Gain

IC= 5A ; VCE= 4V

hFE-2

DC Current Gain

IC= 8A ; VCE= 4V

Current-Gain—Bandwidth Product

IC= 1A ; VCE= 15V

MHz

Switching Times; Resistive Laod

ton

Turn-on Time

0.6

μs

Storage Time

1.5

μs

Fall Time

IC= 8A ;IB1= -IB2= 1A;

VCC= 150V; RC= 18.75Ω

0.4

μs

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