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TIP137 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited |
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TIP137 데이터시트(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor TIP137 DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= -4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -2.0V(Max)@ IC= -4A ·Complement to Type TIP132 APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A ICM Collector Current-Peak -12 A IB B Base Current- Continuous -0.3 A Collector Power Dissipation @TC=25℃ 70 PC Collector Power Dissipation @Ta=25℃ 2 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.785 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 63.5 ℃/W isc Website:www.iscsemi.cn |
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