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KSC5367 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited

부품명 KSC5367
상세설명  isc Silicon NPN Power Transistor
PDF  2 Pages
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제조업체  ISC [Inchange Semiconductor Company Limited]
홈페이지  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

KSC5367 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
KSC5367
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CBO
Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
1600
V
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 5mA; IB= 0
B
800
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
12
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 0.25A; IB= 25mA
2.5
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 0.5A; IB= 50mA
4.5
V
VCE(sat)-3
Collector-Emitter Saturation Voltage
IC= 1A; IB= 0.2A
B
2.5
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 3A; IB= 0.6A
B
1.5
V
ICBO
Collector Cutoff Current
VCB= 1600V; IE= 0
20
μA
IEBO
Emitter Cutoff Current
VEB= 12V; IC=0
20
μA
hFE-1
DC Current Gain
IC= 0.4A; VCE= 3V
12
35
hFE-2
DC Current Gain
IC= 5mA; VCE= 10V
8
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 1MHz
40
pF
Switching Times
ton
Turn-On Time
0.5
μs
ts
Storage Time
2.2
μs
tf
Fall Time
IC= 0.5A; IB1= 42mA;
IB2= -333mA;VCC= 125V
0.5
μs
ton
Turn-On Time
0.5
μs
ts
Storage Time
4.0
μs
tf
Fall Time
IC= 1A; IB1= 0.2A;
IB2= -0.4A;VCC= 250V
0.5
μs
isc Website：www.iscsemi.cn
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