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TSFF5200 데이터시트(PDF) 2 Page - Vishay Siliconix

부품명 TSFF5200
상세설명  High Speed IR Emitting Diode in ø5 mm (T–13/4) Package
PDF  6 Pages
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제조업체  VISHAY [Vishay Siliconix]
홈페이지  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

TSFF5200 데이터시트(HTML) 2 Page - Vishay Siliconix

  TSFF5200 Datasheet HTML 1Page - Vishay Siliconix TSFF5200 Datasheet HTML 2Page - Vishay Siliconix TSFF5200 Datasheet HTML 3Page - Vishay Siliconix TSFF5200 Datasheet HTML 4Page - Vishay Siliconix TSFF5200 Datasheet HTML 5Page - Vishay Siliconix TSFF5200 Datasheet HTML 6Page - Vishay Siliconix  
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TSFF5200
Vishay Telefunken
2 (6)
Rev. 2, 29-Jun-99
www.vishay.de
• FaxBack +1-408-970-5600
Document Number 81060
Basic Characteristics
Tamb = 25_C
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
Forward Voltage
IF = 100 mA, tp = 20 ms
VF
1.45
1.6
V
g
IF = 1 A, tp = 100 ms
VF
2.5
3.0
V
Temp. Coefficient of VF
IF = 100mA
TKVF
–2.4
mV/K
Reverse Current
VR = 5 V
IR
10
mA
Junction Capacitance
VR = 0 V, f = 1 MHz, E = 0
Cj
160
pF
Radiant Intensity
IF = 100 mA, tp = 20 ms
Ie
80
160
mW/sr
y
IF = 1 A, tp = 100 ms
Ie
800
1600
mW/sr
Radiant Power
IF = 100 mA, tp = 20 ms
fe
40
mW
Temp. Coefficient of
fe
IF = 100 mA
TKfe
–0.5
%/K
Angle of Half Intensity
ϕ
±10
deg
Peak Wavelength
IF = 100 mA
lp
870
nm
Spectral Bandwidth
IF = 100 mA
Dl
40
nm
Temp. Coefficient of
lp
IF = 100 mA
TKlp
0.2
nm/K
Rise Time
IF = 100 mA
tr
10
ns
Fall Time
IF = 100 mA
tf
10
ns
Cut–Off Frequency
IDC = 70 mA, IAC = 30 mA pp
fc
35
MHz
Typical Characteristics (Tamb = 25_C unless otherwise specified)
0
20
406080
0
50
100
150
200
250
Tamb – Ambient Temperature ( °C )
100
16111
RthJA
Figure 1. Power Dissipation vs. Ambient Temperature
0
20
406080
0
50
100
150
200
250
Tamb – Ambient Temperature ( °C )
100
16112
RthJA
Figure 2. Forward Current vs. Ambient Temperature



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