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TSHA650 데이터시트(PDF) 2 Page - Vishay Siliconix

부품명 TSHA650
상세설명  GaAlAs Infrared Emitting Diodes in ø 5 mm (T–13/4) Package
PDF  6 Pages
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제조업체  VISHAY [Vishay Siliconix]
홈페이지  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

TSHA650 데이터시트(HTML) 2 Page - Vishay Siliconix

  TSHA650 Datasheet HTML 1Page - Vishay Siliconix TSHA650 Datasheet HTML 2Page - Vishay Siliconix TSHA650 Datasheet HTML 3Page - Vishay Siliconix TSHA650 Datasheet HTML 4Page - Vishay Siliconix TSHA650 Datasheet HTML 5Page - Vishay Siliconix TSHA650 Datasheet HTML 6Page - Vishay Siliconix  
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TSHA650.
Vishay Telefunken
2 (6)
Rev. 3, 20-May-99
www.vishay.de
• FaxBack +1-408-970-5600
Document Number 81022
Basic Characteristics
Tamb = 25_C
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
Forward Voltage
IF = 100 mA, tp = 20 ms
VF
1.5
1.8
V
Temp. Coefficient of VF
IF = 100mA
TKVF
–1.6
mV/K
Reverse Current
VR = 5 V
IR
100
mA
Junction Capacitance
VR = 0 V, f = 1 MHz, E = 0
Cj
20
pF
Temp. Coefficient of
fe
IF = 20 mA
TKfe
–0.7
%/K
Angle of Half Intensity
ϕ
±24
deg
Peak Wavelength
IF = 100 mA
lp
875
nm
Spectral Bandwidth
IF = 100 mA
Dl
80
nm
Temp. Coefficient of
lp
IF = 100 mA
TKlp
0.2
nm/K
Rise Time
IF = 100 mA
tr
600
ns
IF = 1.5 A
tr
300
ns
Fall Time
IF = 100 mA
tf
600
ns
IF = 1.5 A
tf
300
ns
Type Dedicated Characteristics
Tamb = 25_C
Parameter
Test Conditions
Type
Symbol
Min
Typ
Max
Unit
Forward Voltage
IF=1.5A, tp=100ms
TSHA6500/6501
VF
3.2
4.9
V
g
F
m
TSHA6502/6503
VF
3.2
4.5
V
IF=100mA,
TSHA6500
Ie
12
20
mW/sr
F
tp=20ms
TSHA6501
Ie
16
25
mW/sr
TSHA6502
Ie
20
30
mW/sr
Radiant Intensity
TSHA6503
Ie
24
35
mW/sr
Radiant Intensity
IF=1.5A, tp=100ms
TSHA6500
Ie
150
240
mW/sr
F
m
TSHA6501
Ie
200
300
mW/sr
TSHA6502
Ie
250
360
mW/sr
TSHA6503
Ie
300
420
mW/sr
Radiant Power
IF=100mA,
TSHA6500
fe
22
mW
F
tp=20ms
TSHA6501
fe
23
mW
TSHA6502
fe
24
mW
TSHA6503
fe
25
mW



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