TSHA620.

Vishay Telefunken

1 (6)

Rev. 2, 20-May-99

www.vishay.de

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Document Number 81021

GaAlAs Infrared Emitting Diodes in ø 5 mm (T–1

¾)

Package

Description

The TSHA620. series are high efficiency infrared emit-

ting diodes in GaAlAs on GaAlAs technology, molded

in a clear, untinted plastic package.

In comparison with the standard GaAs on GaAs

technology these high intensity emitters feature about

70 % radiant power improvement.

In contrast to the TSHA520. series lead stand–offs are

omitted.

Features

D Extra high radiant power and radiant intensity

D Suitable for high pulse current operation

D Standard T–1¾ (ø 5 mm) package

D Leads formed without stand–off

D Angle of half intensity ϕ = ± 12°

D High reliability

D Good spectral matching to Si photodetectors

94 8389

Applications

Infrared remote control and free air transmission systems with high power and long transmission distance re-

quirements in combination with PIN photodiodes or phototransistors.

Because of the reduced radiance absorption in glass at the wavelength of 875 nm, this emitter series is also

suitable for systems with panes in the transmission range between emitter and detector.

Absolute Maximum Ratings

Parameter

Test Conditions

Symbol

Value

Unit

Reverse Voltage

5

V

Forward Current

100

mA

Peak Forward Current

200

mA

Surge Forward Current

2.5

A

Power Dissipation

210

mW

Junction Temperature

100

°C

Operating Temperature Range

–55...+100

°C

Storage Temperature Range

–55...+100

°C

Soldering Temperature

t

x 5sec, 2 mm from case

260

°C

Thermal Resistance Junction/Ambient

350

K/W