전자부품 데이터시트 검색엔진
  Korean  ▼
ALLDATASHEET.CO.KR

X  

Preview PDF HTML

STM8601 데이터시트(PDF) 3 Page - SamHop Microelectronics Corp.

부품명 STM8601
상세설명  Dual Enhancement Mode Field Effect Transistor ( N and P Channel )
PDF  11 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
제조업체  SAMHOP [SamHop Microelectronics Corp.]
홈페이지  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STM8601 데이터시트(HTML) 3 Page - SamHop Microelectronics Corp.

  STM8601 Datasheet HTML 1Page - SamHop Microelectronics Corp. STM8601 Datasheet HTML 2Page - SamHop Microelectronics Corp. STM8601 Datasheet HTML 3Page - SamHop Microelectronics Corp. STM8601 Datasheet HTML 4Page - SamHop Microelectronics Corp. STM8601 Datasheet HTML 5Page - SamHop Microelectronics Corp. STM8601 Datasheet HTML 6Page - SamHop Microelectronics Corp. STM8601 Datasheet HTML 7Page - SamHop Microelectronics Corp. STM8601 Datasheet HTML 8Page - SamHop Microelectronics Corp. STM8601 Datasheet HTML 9Page - SamHop Microelectronics Corp. Next Button
Zoom Inzoom in Zoom Outzoom out
 3 / 11 page
background image
Symbol
Min
Typ
Max
Units
BVDSS
-60
V
-1
IGSS
±100
nA
VGS(th)
-1.0
V
85
gFS
S
VSD
CISS
730
pF
COSS
68
pF
CRSS
43
pF
Qg
12.4
nC
10.5
nC
Qgs
65
nC
Qgd
23
tD(ON)
14
ns
tr
1.5
ns
tD(OFF)
3.3
ns
tf
ns
Gate-Drain Charge
VDS=-30V,VGS=0V
SWITCHING CHARACTERISTICS
Gate-Source Charge
VDD=-30V
ID=-1A
VGS=-10V
RGEN=3.3 ohm
Total Gate Charge
Rise Time
Turn-Off Delay Time
VDS=-30V,ID=-3.3A,VGS=-10V
Fall Time
Turn-On Delay Time
m ohm
VGS=-10V , ID=-3.3A
VDS=-5V , ID=-3.3A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
RDS(ON)
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
IDSS
uA
Gate Threshold Voltage
VDS=VGS , ID=-250uA
VDS=-48V , VGS=0V
VGS= ±20V , VDS=0V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
P-Channel ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V , ID=-250uA
Reverse Transfer Capacitance
ON CHARACTERISTICS
-3.0
VGS=-4.5V , ID=-2.8A
105
110
150
m ohm
c
f=1.0MHz
c
VDS=-30V,ID=-3.3A,
VGS=-30V
DRAIN-SOURCE DIODE CHARACTERISTICS
VGS=0V,IS=-2A
-0.81
-1.2
V
Notes
_
_
STM8601
www.samhop.com.tw
Nov,06,2008
3
nC
VDS=-30V,ID=-3.3A,VGS=-4.5V
6.7
_
-1.8
b
a.Surface Mounted on FR4 Board,t < 10sec.
b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=0.5mH,VDD=20V,VGS=10V.(See Figure13)
IS
Maximum Continuous Drain-Source Diode Forward Current
-2
A
7
Ver 1.0



Html Pages

1 2 3 4 5 6 7 8 9 10 11


데이터시트 다운로드

Go To PDF Page


링크 URL



ALLDATASHEET 가 귀하에 도움이 되셨나요?  [ DONATE ] 

Alldatasheet는?   |   광고문의   |   운영자에게 연락하기   |   개인정보취급방침   |   링크 투 데이터시트    |   링크교환   |   제조사별 검색
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com