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STU313D 데이터시트(PDF) 3 Page - SamHop Microelectronics Corp.

부품명 STU313D
상세설명  Dual Enhancement Mode Field Effect Transistor (N and P Channel)
PDF  11 Pages
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제조업체  SAMHOP [SamHop Microelectronics Corp.]
홈페이지  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STU313D 데이터시트(HTML) 3 Page - SamHop Microelectronics Corp.

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background image
Symbol
Min
Typ
Max
Units
BVDSS
-30
V
-1
IGSS
±10
uA
VGS(th)
-1
V
26
gFS
10
S
VSD
CISS
815
pF
COSS
225
pF
CRSS
130
pF
Qg
11.8
nC
18
nC
Qgs
65
nC
Qgd
39
tD(ON)
16
ns
tr
1.6
ns
tD(OFF)
4.8
ns
tf
ns
Gate-Drain Charge
VDS=-15V,VGS=0V
SWITCHING CHARACTERISTICS
Gate-Source Charge
VDD=-15V
ID=-1A
VGS=-10V
RGEN=6 ohm
Total Gate Charge
Rise Time
Turn-Off Delay Time
VDS=-15V,ID=-7.5A,VGS=-10V
Fall Time
Turn-On Delay Time
m ohm
VGS=-10V , ID=-7.5A
VDS=-10V , ID=-7.5A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
RDS(ON)
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
IDSS
uA
Gate Threshold Voltage
VDS=VGS , ID=-250uA
VDS=-24V , VGS=0V
VGS= ±20V , VDS=0V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
P-Channel ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V , ID=-250uA
Reverse Transfer Capacitance
ON CHARACTERISTICS
-3
VGS=-4.5V , ID=-6A
33
39
52
m ohm
c
f=1.0MHz
c
VDS=-15V,ID=-7.5A,
VGS=-10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VGS=0V,IS=-2A
-0.78
-1.3
V
Notes
a.Surface Mounted on FR4 Board,t < 10sec.
b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=0.5mH,VDD = 30V.(See Figure13)
_
_
STU313D
Ver 1.0
www.samhop.com.tw
Jul,30,2008
3
nC
VDS=-15V,ID=-7.5A,VGS=-4.5V
7.8
_
-1.7
b
IS
Maximum Continuous Drain-Source Diode Forward Current
A
-2



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