| 전자부품 데이터시트 검색엔진 |
|
2SC3061 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited |
|
|
|||||||||||||||||||||||||||||
2SC3061 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited |
|
2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC3061 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;RBE=∞ 850 V V(BR)CBO Collector-base breakdown voltage IC=1mA; IE=0 1200 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 7 V VCE(sat) Collector-emitter saturation voltage IC=4A; IB=0.8A 1.5 V VBE(sat) Base-emitter saturation voltage IC=4A; IB=0.8A 2.0 V VCB=1000V; IE=0 100 μA ICBO Collector cut-off current VCB=1000V; IE=0, TC=100℃ 1 mA IEBO Emitter cut-off current VEB=6V; IC=0 100 μA hFE DC current gain IC=4A ; VCE=5V 10 30 fT Transition frequency IC=1A ; VCE=10V 15 MHz Cob Output capacitance IE=0; VCB=10V,f=1MHz 220 pF Switching times tr Rise time 0.5 μs tstg Storage time 3.5 μs tf Fall time VCC=400V; IC=4A IB1=0.4A;IB2=-1.2A; 0.3 μs |
|
|
링크 URL |
| ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크 투 데이터시트 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |