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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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2SC3944 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC3944 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page  Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC3944 2SC3944A CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2SC3944 150 V(BR)CEO Collector-emitter breakdown voltage 2SC3944A IC=1mA; IB=0 180 V V(BR)EBO Emitter-base breakdown voltage IE=10μA; IC=0 5 V VCEsat Collector-emitter saturation voltage IC=0.5 A;IB=50m A 2.0 V VBEsat Base-emitter saturation voltage IC=0.5 A;IB=50m A 2.0 V 2SC3944 VCB=150V; IE=0 ICBO Collector cut-off current 2SC3944A VCB=180V; IE=0 10 μA hFE-1 DC current gain IC=150mA ; VCE=10V 95 220 hFE-2 DC current gain IC=500mA ; VCE=5V 50 fT Transition frequency IC=50mA ; VCB=10V 200 MHz COB Output capacitance IE=0; VCB=10V;f=1MHz 30 pF hFE classifications Q R 95-155 130-220 |
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