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2SD198 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD198 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD198 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0 300 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 6 V VCEsat Collector-emitter saturation voltage IC=1.0A; IB=0.1A 1.0 V VBEsat Base-emitter saturation voltage IC=1.0A; IB=0.1A 1.5 V ICBO Collector cut-off current VCB=300V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=6V; IC=0 0.1 mA hFE DC current gain IC=0.1A ; VCE=5V 30 300 fT Transition frequency IC=0.5A ; VCE=10V 25 MHz 2 |
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