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2SD866A 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD866A 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD866 2SD866A CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2SD866 80 V(BR)CEO Collector-emitter breakdown voltage 2SD866A IC=0.2A; IB=0 100 V VCEsat Collector-emitter saturation voltage IC=5 A;IB=0.25 A B 0.5 V VBEsat Base-emitter saturation voltage IC=5 A;IB=0.25 A B 1.5 V ICBO Collector cut-off current VCB=100V; IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 50 μA hFE-1 DC current gain IC=0.1A ; VCE=2V 45 hFE-2 DC current gain IC=3A ; VCE=2V 60 260 fT Transition frequency IC=0.5A ; VCE=10V 30 MHz Switching times ton Turn-on time 0.5 μs ts Storage time 1.5 μs tf Fall time IC=3A;IB1=-IB2=0.3 A 0.1 μs hFE-2 classifications R Q P 60-120 90-180 130-260 2 |
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