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2SD898 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD898 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD898 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=200mA; IC=0; 6 V VCEsat Collector-emitter saturation voltage IC=2.5A;IB=0.8 A 5.0 V VBEsat Base-emitter saturation voltage IC=2.5A;IB=0.8 A 1.5 V ICES Collector cut-off current VCE=1500V;RBE=0 0.5 mA IEBO Emitter cut-off current VEB=6V;IC=0 50 200 mA hFE DC current gain IC=0.5A ; VCE=5V 10 40 VF Diode forward voltage IF=3A 2.2 V 2 |
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