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2SD1985 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SD1985 데이터시트(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 4 page ![]() Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1985 2SD1985A DESCRIPTION ·With TO-220Fa package ·High forward current transfer ratio hFE which has satisfactory linearity ·Low collector saturation voltage ·Complement to type 2SB1393 /1393A APPLICATIONS ·For power amplification PINNING Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2SD1985 60 VCBO Collector-base voltage 2SD1985A Open emitter 80 V 2SD1985 60 VCEO Collector-emitter voltage 2SD1985A Open base 80 V VEBO Emitter-base voltage Open collector 6 V IC Collector current (DC) 3 A ICM Collector current-peak 5 A TC=25℃ 25 PC Collector power dissipation Ta=25℃ 2 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol |
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