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BD131 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BD131 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors BD131 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEsat-1 Collector-emitter saturation voltage IC=0.5A; IB=50mA 0.3 V VCEsat-2 Collector-emitter saturation voltage IC=2A; IB=0.2A 0.7 V VBEsat-1 Base-emitter saturation voltage IC=0.5A; IB=50mA 1.2 V VBEsat-2 Base-emitter saturation voltage IC=2A; IB=0.2A 1.5 V VCB=50V; IE=0 50 nA ICBO Collector cut-off current VCB=50V; IE=0 Tj=150℃ 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 50 nA hFE-1 DC current gain IC=0.5A ; VCE=12V 40 hFE-2 DC current gain IC=2A ; VCE=1V 20 fT Transition frequency IC=0.25A; VCE=5V ;f=100MHz 60 MHz |
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