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BD646 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BD646 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BD646 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 -60 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A; IB= -12mA B -2.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -5A; IB= -50mA B -2.5 V VBE(sat) Base-Emitter Saturation Voltage IC= -5A; IB= -50mA B -3.0 V VBE(on) Base-Emitter On Voltage IC= -3A ; VCE= -3V -2.5 V VCB= -60V; IE= 0 -0.2 ICBO Collector Cutoff Current VCB= -40V; IE= 0; TC= 150℃ -2.0 mA ICEO Collector Cutoff Current VCE= -30V; IB= 0 B -0.5 mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -5 mA hFE DC Current Gain IC= -3A ; VCE= -3V 750 isc Website:www.iscsemi.cn 2 |
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