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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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2SC1985 데이터시트(PDF) 2 Page - Savantic, Inc. |
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2SC1985 데이터시트(HTML) 2 Page - Savantic, Inc. |
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2 / 3 page  SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC1985 2SC1986 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2SC1985 60 V(BR)CEO Collector-emitter breakdown voltage 2SC1986 IC=25mA ,IB=0 80 V VCEsat Collector-emitter saturation voltage IC=3A; IB=0.3A 1.0 V 2SC1985 VCB=80V; IE=0 ICBO Collector cut-off current 2SC1986 VCB=100V; IE=0 1.0 mA IEBO Emitter cut-off current VEB=6V; IC=0 1.0 mA hFE DC current gain IC=1A ; VCE=4V 40 fT Transition frequency IC=0.5A ; VCE=12V 10 MHz Switching times tr Rise time 1.1 µs tstg Storage time 1.8 µs tf Fall time IC=3A ; VCC=9V IB1=-IB2=0.3A;RL=3C 0.55 µs |
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