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BUT12AX 데이터시트(PDF) 2 Page - Savantic, Inc. |
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BUT12AX 데이터시트(HTML) 2 Page - Savantic, Inc. |
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2 / 3 page ![]() SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors BUT12AX CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0;L=25mH 450 V VCEsat Collector-emitter saturation voltage IC=5A; IB=1A 1.5 V VBEsat Base-emitter saturation voltage IC=5A; IB=1A 1.5 V ICES Collector cut-off current VCE=Rated VCES ;VBE=0 Tj=125 1.0 3.0 mA IEBO Emitter cut-off current VEB=9V; IC=0 10 mA hFE-1 DC current gain IC=10mA ; VCE=5V 10 35 hFE-2 DC current gain IC=1A ; VCE=5V 10 35 Switching times resistive load ton Turn-on time 1.0 µs ts Storage time 4.0 µs tf Fall time IC=5A; IB1=-IB2=1A 0.8 µs |
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