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EN25F16-75VIP 데이터시트(PDF) 29 Page - Eon Silicon Solution Inc. |
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EN25F16-75VIP 데이터시트(HTML) 29 Page - Eon Silicon Solution Inc. |
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29 / 35 page ![]() This Data Sheet may be revised by subsequent versions ©2004 Eon Silicon Solution, Inc., www.essi.com.tw or modifications due to changes in technical specifications. 29 EN25F16 Rev. C, Issue Date: 2008/06/23 Table 12. DATA RETENTION and ENDURANCE Parameter Description Test Conditions Min Unit 150°C 10 Years Minimum Pattern Data Retention Time 125°C 20 Years Erase/Program Endurance -40 to 85 °C 100k cycles Table 13. LATCH UP CHARACTERISTICS Parameter Description Min Max Input voltage with respect to Vss on all pins except I/O pins (including A9, Reset and OE#) -1.0 V 12.0 V Input voltage with respect to Vss on all I/O Pins -1.0 V Vcc + 1.0 V Vcc Current -100 mA 100 mA Note : These are latch up characteristics and the device should never be put under these conditions. Refer to Absolute Maximum ratings for the actual operating limits. Table 14. CAPACITANCE ( VCC = 2.7-3.6V) Parameter Symbol Parameter Description Test Setup Typ Max Unit CIN Input Capacitance VIN = 0 6 pF COUT Output Capacitance VOUT = 0 8 pF Note : Sampled only, not 100% tested, at T A = 25°C and a frequency of 20MHz. |
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