2SC1959 datasheet(1/1 Pages) DCCOM

부품명	2SC1959

상세설명	TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

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2SC1959

DISCRETE SEMICONDUCTORS

R

DC COMPONENTS CO., LTD.

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description

Designed for audio frequency low-power amplifier

applications.

Pinning

1 = Emitter

2 = Collector

3 = Base

TO-92

Dimensions in inches and (millimeters)

.022(0.56)

.014(0.36)

.050

(1.27)

.148(3.76)

.132(3.36)

Typ

.190(4.83)

.170(4.33)

.100

(2.54)

Typ

.050

(1.27)

Typ

.022(0.56)

.014(0.36)

.190(4.83)

.170(4.33)

.500

(12.70)

Min

2oTyp

5oTyp.

2oTyp

3 2 1

5oTyp.

Characteristic

Symbol

Rating

Unit

Collector-Base Voltage

VCBO

35

V

Collector-Emitter Voltage

VCEO

30

V

Emitter-Base Voltage

VEBO

5

V

Collector Current

IC

500

mA

Total Power Dissipation

PD

500

mW

Junction Temperature

TJ

+150

o

C

Storage Temperature

TSTG

-55 to +150

o

C

Absolute Maximum Ratings(TA=25oC)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Conditions

Collector-Base Breakdown Volatge

BVCBO

35

-

V

IC=100

µA, IE=0

Collector-Emitter Breakdown Voltage

BVCEO

30

-

V

IC=1mA, IB=0

Emitter-Base Breakdown Volatge

BVEBO

5

-

V

IE=10

µA, IC=0

Collector Cutoff Current

ICBO

-

0.1

µA

VCB=35V, IE=0

Emitter Cutoff Current

IEBO

-

0.1

µA

VEB=5V, IC=0

Collector-Emitter Saturation Voltage(1)

VCE(sat)

-

0.25

V

IC=100mA, IB=10mA

Base-Emitter On Voltage(1)

VBE(on)

-

1

V

IC=100mA, VCE=1V

DC Current Gain(1)

hFE1

120

-

240

-

IC=100mA, VCE=1V

hFE2

40

-

IC=400mA, VCE=6V

Transition Frequency

fT

-

300

-

MHz

IC=20mA, VCE=6V

Output Capacitance

Cob

-

7

-

pF

VCB=6V, f=1MHz, IE=0

Electrical Characteristics

(Ratings at 25oC ambient temperature unless otherwise specified)

(1)Pulse Test: Pulse Width

380

µs, Duty Cycle 2%

유사한 부품 번호 - 2SC1959

제조업체	부품명	데이터시트	상세설명
Toshiba Semiconductor	2SC1959	138Kb / 2P	TRANSISTOR (AUDIO FREQUENCY LOW POWER, DRIVER STAGE AMPLIFIER SWITCHING APPLICATIONS)
TRANSYS Electronics Lim...	2SC1959	59Kb / 1P	Plastic-Encapsulated Transistors
Toshiba Semiconductor	2SC1959	319Kb / 3P	Silicon PNP Epitaxial Type (PCT process)
SeCoS Halbleitertechnol...	2SC1959	84Kb / 1P	NPN Plastic Encapsulated Transistor
Tiger Electronic Co.,Lt...	2SC1959	50Kb / 3P	NPN EPITAXIAL PLANAR TRANSISTOR

More results

유사한 설명 - 2SC1959

제조업체	부품명	데이터시트	상세설명
Dc Components	DC9013	215Kb / 1P	TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
	DC8050S	240Kb / 2P	TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
	DC9014	215Kb / 1P	TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
	DXT3904	237Kb / 1P	TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
	DXTA44	237Kb / 1P	TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
	MPSA42M	213Kb / 1P	TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
	BD237D	218Kb / 1P	TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
	2N3773	234Kb / 1P	TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
	2SD667A	215Kb / 1P	TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
	2SD965	213Kb / 1P	TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

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2SC1959 데이터시트(PDF) 1 Page - Dc Components

2SC1959 데이터시트(HTML) 1 Page - Dc Components

유사한 부품 번호 - 2SC1959

유사한 설명 - 2SC1959

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