TIP31C datasheet(1/1 Pages) DCCOM

부품명	TIP31C

상세설명	TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

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제조업체	DCCOM [Dc Components]

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TIP31C

DISCRETE SEMICONDUCTORS

R

DC COMPONENTS CO., LTD.

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description

Designed for use in general purpose amplifier and

switching applications.

Pinning

1 = Base

2 = Collector

3 = Emitter

TO-220AB

Dimensions in inches and (millimeters)

.625(15.87)

.570(14.48)

.562(14.27)

.500(12.70)

.055(1.39)

.045(1.15)

.185(4.70)

.173(4.40)

.405(10.28)

.380(9.66)

.295(7.49)

.220(5.58)

.350(8.90)

.330(8.38)

.640

(16.25)

Typ

.055(1.40)

.045(1.14)

.037(0.95)

.030(0.75)

.100

(2.54)

Typ

.024(0.60)

.014(0.35)

Φ.151

Φ(3.83)

Typ

1 2 3

Characteristic

Symbol

Rating

Unit

Collector-Base Voltage

VCBO

100

V

Collector-Emitter Voltage

VCEO

100

V

Emitter-Base Voltage

VEBO

5

V

Collector Current

IC

3

A

Total Power Dissipation(TC=25oC)

PD

40

W

Junction Temperature

TJ

+150

o

C

Storage Temperature

TSTG

-55 to +150

o

C

Absolute Maximum Ratings(TA=25oC)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Conditions

Collector-Base Breakdown Volatge

BVCBO

100

-

V

IC=1mA, IE=0

Collector-Emitter Breakdown Voltage

BVCEO

100

-

V

IC=30mA, IB=0

Collector Cutoff Current

ICES

-

200

µA

VCE=100V, IB=0

ICEO

-

300

µA

VCE=60V, IB=0

Emitter Cutoff Current

IEBO

-

1

mA

VEB=5V, IC=0

Collector-Emitter Saturation Voltage(1)

VCE(sat)

-

1.2

V

IC=3A, IB=375mA

Base-Emitter On Voltage(1)

VBE(on)

-

1.8

V

IC=3A, VCE=4V

DC Current Gain(1)

hFE1

25

-

IC=1A, VCE=4V

hFE2

10

-

50

-

IC=3A, VCE=4V

Transition Frequency

fT

3

-

MHz

IC=0.5A, VCE=10V, f=1MHz

Electrical Characteristics

(Ratings at 25oC ambient temperature unless otherwise specified)

(1)Pulse Test: Pulse Width

380

µs, Duty Cycle 2%

유사한 부품 번호 - TIP31C

제조업체	부품명	데이터시트	상세설명
Mospec Semiconductor	TIP31C	192Kb / 4P	POWER TRANSISTORS(3A,40-100V,40W)
Motorola, Inc	TIP31C	196Kb / 6P	POWER TRANSISTORS COMPLEMENTARY SILICON
ON Semiconductor	TIP31C	196Kb / 6P	POWER TRANSISTORS COMPLEMENTARY SILICON REV 1
Power Innovations Ltd	TIP31C	86Kb / 6P	NPN SILICON POWER TRANSISTORS
STMicroelectronics	TIP31C	64Kb / 5P	COMPLEMENTARY SILICON POWER TRANSISTORS Oct-1999

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유사한 설명 - TIP31C

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Dc Components	DC9013	215Kb / 1P	TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
	DC8050S	240Kb / 2P	TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
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	DXTA44	237Kb / 1P	TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
	MPSA42M	213Kb / 1P	TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
	BD237D	218Kb / 1P	TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
	2N3773	234Kb / 1P	TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
	2SC1959	214Kb / 1P	TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
	2SD667A	215Kb / 1P	TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

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TIP31C 데이터시트(PDF) 1 Page - Dc Components

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