| 전자부품 데이터시트 검색엔진 |
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2SC4934D 데이터시트(PDF) 2 Page - Hitachi Semiconductor |
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2SC4934D 데이터시트(HTML) 2 Page - Hitachi Semiconductor |
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2 / 3 page ![]() Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions ——————————————————————————————————————————— Collector to base V(BR)CBO 120 — — V IC = 10 µA, breakdown voltage IE = 0 ——————————————————————————————————————————— Collector to emitter V(BR)CEO 120 — — V IC = 1 mA, breakdown voltage RBE = ∞ ——————————————————————————————————————————— Emitter to base V(BR)EBO 5— — V IE = 10 µA, breakdown voltage IC = 0 ——————————————————————————————————————————— Collector cutoff current ICBO ——10 µA VCB = 80 V, IE = 0 ——————————————————————————————————————————— DC current 2SC4934D hFE 250 — 500 VCE = 5 V, transfer ratio —————————————————————— IC = 10 mA 2SC4934E hFE 400 — 800 ——————————————————————————————————————————— Base to emitter voltage VBE — — 1.0 V VCE = 5 V, IC = 10 mA ——————————————————————————————————————————— Collector to emitter VCE(sat) — — 1.0 V IC = 200 mA, saturation voltage IB = 20 mA ——————————————————————————————————————————— Gain bandwidth product fT — 350 — MHz VCE = 10 V, IE = 50 mA ——————————————————————————————————————————— Collector output capacitance Cob — 3.5 — pF VCB = 30 V, IE = 0, f = 1 MHz ——————————————————————————————————————————— See characteristic curves of 2SC4046. 2SC4934 |
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