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RJK0393DPA-00-J53 데이터시트(PDF) 3 Page - Renesas Technology Corp

부품명 RJK0393DPA-00-J53
상세설명  Silicon N Channel Power MOS FET Power Switching
PDF  7 Pages
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제조업체  RENESAS [Renesas Technology Corp]
홈페이지  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJK0393DPA-00-J53 데이터시트(HTML) 3 Page - Renesas Technology Corp

  RJK0393DPA-00-J53 Datasheet HTML 1Page - Renesas Technology Corp RJK0393DPA-00-J53 Datasheet HTML 2Page - Renesas Technology Corp RJK0393DPA-00-J53 Datasheet HTML 3Page - Renesas Technology Corp RJK0393DPA-00-J53 Datasheet HTML 4Page - Renesas Technology Corp RJK0393DPA-00-J53 Datasheet HTML 5Page - Renesas Technology Corp RJK0393DPA-00-J53 Datasheet HTML 6Page - Renesas Technology Corp RJK0393DPA-00-J53 Datasheet HTML 7Page - Renesas Technology Corp  
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RJK0393DPA
REJ03G1784-0200 Rev.2.00 Apr 03, 2009
Page 3 of 6
Main Characteristics
Case Temperature Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Maximum Safe Operation Area
80
60
40
20
0
50
100
150
200
100
10
1
0.1
0.1
0.3
1
3
10
30
100
1000
Tc = 25 °C
1 shot Pulse
Operation in
this area is
limited by RDS(on)
10ms
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain Current ID (A)
Static Drain to Source on State Resistance
vs. Drain Current
200
160
120
80
40
0
4
8
12
16
20
20
10
2
5
1
30
300
Pulse Test
ID = 20 A
5 A
10 A
1
10
100
1000
3
100
50
VGS = 4.5 V
10 V
Pulse Test
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Typical Transfer Characteristics
50
40
30
20
10
0
2
468
10
50
40
30
20
10
0
12
3
4
5
Tc = 75°C
25°C
–25°C
VDS = 10 V
Pulse Test
VGS = 2.4 V
10 V
4.5 V
2.5 V
Pulse Test
2.7 V
2.9 V
10
µs



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