2SB772 datasheet(1/2 Pages) SECOS

부품명	2SB772

상세설명	PNP Type Plastic Encapsulate Transistors

PDF	2 Pages

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제조업체	SECOS [SeCoS Halbleitertechnologie GmbH]

홈페이지	http://www.secosgmbh.com

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1 / 2 page

-Jun-2005 Rev. B

Page 1 of

2

01

Elektronische Bauelemente

2SB772

PNP Type

Features

* Power Dissipation:

PCM: 625 mW (Tamb=25 C)

MAXIMUM RATINGS* TA=25

unless otherwise noted

Symbol

meter

Para

Value

Units

VCBO

Collector-Base Voltage

-40

V

VCEO

Collector-Emitter Voltage

-30

V

VEBO

Emitter-Base Voltage

-6

V

IC

Collector Current –Continuous

-3

A

PC

Collector Dissipation

0.625

W

TJ

Junction Temperature

150

Tstg

Storage Temperature

-55~150

C

o

C

o

C

o

http://www.SeCoSGmbH.com/

Any changing of specification will not be informed individual

o

Plastic Encapsulate Transistors

ELECTRICAL

CHARACTERISTICS（Tamb=25℃

unless

otherwise

specified）

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

Ic=-100μA ，IE=0

-40

V

Collector-emitter breakdown voltage

V(BR)CEO

IC= -10 mA , IB=0

-30

V

Emitter-base breakdown voltage

V(BR)EBO

IE= -100 μA，IC=0

-6

V

Collector cut-off current

ICBO

VCB= -40 V , IE=0

-1

μ

A

Collector cut-off current

ICEO

VCE=-30 V , IB=0

-10

μ

A

Emitter cut-off current

IEBO

VEB=-6V ,

IC=0

-1

μ

A

hFE（1）

VCE= -2V, IC= -1A

60

400

DC current gain

hFE（2）

VCE=-2V, IC= -100mA

32

Collector-emitter saturation voltage

VCE(sat)

IC=-2A, IB= -0.2A

-0.5

V

Base-emitter saturation voltage

VBE(sat)

IC=-2A, IB= -0.2A

-1.5

V

Transition frequency

f T

VCE= -5V, IC=-0.1A

f = 10MHz

50

MHz

CLASSIFICATION OF hFE(1)

Rank

R

O

Y

GR

Range

60-120

100-200

160-320

200-400

4.55±0.2

3.5±0.2

2.54±0.1

(1.27 Typ.)

0.46+0.1

–0.1

0.43+0.08

–0.07

1

3

2

1: Emitter

2: Collector

3: Base

1.25–0.2

+0.2

TO-92

RoHS Compliant Product

A suffix of "-C" specifies halogen & lead-free

유사한 부품 번호 - 2SB772

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