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2SD1619 데이터시트(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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2SD1619 데이터시트(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 3 page ![]() Any changing of specification will not be informed individual 2SB1119/2SD1619 PNP Silicon Medium Power Transistor RoHS Compliant Product http://www.SeCoSGmbH.com Elektronische Bauelemente Symbol A b b1 c D D1 E E1 e e1 L Min 1.400 0.320 0.360 0.350 4.400 1.400 2.300 3.940 2.900 0.900 Max 1.600 0.520 0.560 0.440 4.600 1.800 2.600 4.250 3.100 1.100 Min 0.055 0.013 0.014 0.014 0.173 0.055 0.091 0.155 0.114 0.035 Max 0.063 0.020 0.022 0.017 0.181 0.071 0.102 0.167 0.122 0.043 Dimensions In Millimeters Dimensions In Inches 0.060TYP 1.500TYP D D1 C A b b1 e e1 SOT-89 1.BASE 2.COLLECTOR 3.EMITTER FEATURES Power dissipation P CM : 500mW Tamb=25 Collector current ICM :-1 A Collector-base voltage VB(BR)CBO : -25 V Operating and storage junction temperature range TJ Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS Tamb=25 unlessotherwise specified CLASSIFICATION OF hFE(1) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=-10 A IE=0 -25 V Collector-emitter breakdown voltage V(BR)CEO IC= -1 mA , IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE= -10 A IC=0 -5 V Collector cut-off current ICBO VCB= -20 V , IE=0 -0.1 A Collector cut-off current ICEO VCE= -20 V , IB=0 -0.1 A Emitter cut-off current IEBO VEB=-4V , IC=0 -0.1 A hFE 1 VCE= -2V, IC= -50mA 100 560 DC current gain hFE 2 VCE=-2V, IC= -1A 40 Collector-emitter saturation voltage VCE(sat) IC=-0.5A, IB= -50mA -0.7 V Base-emitter saturation voltage VBE(sat) IC=-0.5A, IB= -50mA -1.2 V Transition frequency f T VCE= -10V, IC=-50mA VCB=-10V, f = 1MH 180 MHz CLASSIFICATION OF hFE(1) Rank RS T U Range 100-200 140-280 200-400 280-560 Collector output capacitance 25 pF Cob Marking 2SB1119 : BB 2SD1619 : DB 01-Jun-2002 Rev. A Page 1 of 3 |
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