BAS16S datasheet(1/2 Pages) SECOS

부품명	BAS16S

상세설명	Surface Mount Switching Diode

PDF	2 Pages

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제조업체	SECOS [SeCoS Halbleitertechnologie GmbH]

홈페이지	http://www.secosgmbh.com

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FEATURES

High-Speed Switching Applications

Lead Finish: 100% Matte Sn ( Tin )

Qualified Reflow Temperature: 260

℃

Extremely Small SOD-523 Package

MARKING: A6

Maximum Ratings and Electrical Characteristics, Single Diode @TA=25

℃

Parameter

Symbol

Limits

Unit

DC reverse voltage

VR

75

V

Forward current

IF

200

mA

Pak forward surge current

IFM(surge)

500

mA

Total Device Dissipation

PD

150

mW

Thermal Resistance Junction to Ambient

RθJA

635

℃/W

Junction and storage temperature

Tj ,Tstg

150

℃

Electrical Ratings @TA=25

℃

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Reverse breakdown voltage

V(BR)R

75

IR=100uA

VF1

715

IF=1mA

VF2

855

IF=10mA

VF3

1000

IF=50mA

Forward voltage

VF4

1250

mV

IF=150mA

Reverse recovery Time

trr

6.0

ns

IF=IR=10mAdc,RL=50Ω

Reverse current

IR

1.0

μA

VR=75V

Forward

recovery voltage

VFR

1.75

V

IF=10mA, tr= 20ns

Diode Capacitance

CD

2.0

pF

VR=0V,f=1MHZ

Stored charge

QS

45

pC

IF=10mA, VR=5.0V ,RL=500Ω

Any changing of specification will not be informed individua

BAS16S

Surface Mount Switching Diode

0.12±0.05

S OD-523

0.3±0.05

0.8±0.05

CATHODE MARK

0.6±0.1

Dimensions in millimeters

Elektronische Bauelemente

http://www.SeCoSGmbH.com

01-Jun-2007 Rev. A

Page 1 of 2

RoHS Compliant Product

A suffix of "-C" specifies halogen & lead-free

유사한 부품 번호 - BAS16S

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Siemens Semiconductor G...	BAS16S	64Kb / 4P	Silicon Switching Diode Array (For high-speed switching applications Internal (galvanic) isolated Diodes in one package)
Infineon Technologies A...	BAS16S	517Kb / 10P	Silicon Switching Diode Dec-04-2003
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BAS16S 데이터시트(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

BAS16S 데이터시트(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

유사한 부품 번호 - BAS16S

유사한 설명 - BAS16S

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