1 / 1 page
Dated : 08/12/2006
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
MMBTRC110SS…MMBTRC114SS
NPN Silicon Epitaxial Planar Transistor
for switching and interface circuit and drive circuit
applications
Features
• With built-in bias resistors
• Simplify circuit design
• Reduce a quantity of parts and
manufacturing process
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Collector Base Voltage
VCBO
50
V
Collector Emitter Voltage
VCEO
50
V
Emitter Base Voltage
VEBO
5
V
Collector Current
IC
100
mA
Power Dissipation
Ptot
200
mW
Junction Temperature
Tj
150
O
C
Storage Temperature Range
TS
- 55 to + 150
O
C
Characteristics at Ta = 25 OC
Parameter
Symbol
Min.
Typ.
Max.
Unit
DC Current Gain
at VCE = 5 V, IC = 1 mA
hFE
120
-
-
-
Collector Cutoff Current
at VCB = 50 V
ICBO
-
-
100
nA
Emitter Cutoff Current
at VEB = 5 V
IEBO
-
-
100
nA
Collector Emitter Saturation Voltage
at IC = 10 mA, IB = 0.5 mA
VCE(sat)
-
-
0.3
V
Transition Frequency
at VCE = 10 V, IC = 5 mA
fT
-
250
-
MHz
Input Resistor
MMBTRC110SS
MMBTRC111SS
MMBTRC112SS
MMBTRC113SS
MMBTRC114SS
R1
-
-
-
-
-
4.7
10
100
22
47
-
-
-
-
-
KΩ
SOT-23 Plastic Package
Base
Emitter
R1
Collector
Korean ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
