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SSD01L60 데이터시트(PDF) 4 Page - SeCoS Halbleitertechnologie GmbH

부품명 SSD01L60
상세설명  N-Channel Enhancement Mode Power Mos.FET
PDF  4 Pages
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제조업체  SECOS [SeCoS Halbleitertechnologie GmbH]
홈페이지  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SSD01L60 데이터시트(HTML) 4 Page - SeCoS Halbleitertechnologie GmbH

  SSD01L60 Datasheet HTML 1Page - SeCoS Halbleitertechnologie GmbH SSD01L60 Datasheet HTML 2Page - SeCoS Halbleitertechnologie GmbH SSD01L60 Datasheet HTML 3Page - SeCoS Halbleitertechnologie GmbH SSD01L60 Datasheet HTML 4Page - SeCoS Halbleitertechnologie GmbH  
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01-Jun-2002 Rev. A
Page 4 of 4
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
Elektronische Bauelemente
SSD01L60
1A, 600V,RDS(ON)12
N-Channel Enhancement Mode Power Mos.FET
Ω



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