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SSD408 데이터시트(PDF) 4 Page - SeCoS Halbleitertechnologie GmbH |
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SSD408 데이터시트(HTML) 4 Page - SeCoS Halbleitertechnologie GmbH |
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4 / 4 page ![]() -Jun-2002 Rev. A Page 4 of 4 01 http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual Elektronische Bauelemente Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics N-Channel Enhancement Mode Power Mos.FET SSD408 18A, 30V,RDS(ON)18mΩ Fig 11. Normalized Maximum Transient Thermal Impedance 0.0001 0.001 0.1 1 10 1000 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 |
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