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SSF1332E 데이터시트(PDF) 4 Page - SeCoS Halbleitertechnologie GmbH |
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SSF1332E 데이터시트(HTML) 4 Page - SeCoS Halbleitertechnologie GmbH |
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4 / 4 page ![]() Elektronische Bauelemente SSF1332E 0.6A, 20V,RDS(ON) 600m N-Channel Enhancement Mode Power Mos.FET Ω Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 01-Jun-2002 Rev. A Page 4 of 4 http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual |
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