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SSG4501 데이터시트(PDF) 5 Page - SeCoS Halbleitertechnologie GmbH |
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SSG4501 데이터시트(HTML) 5 Page - SeCoS Halbleitertechnologie GmbH |
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5 / 9 page ![]() 01-Jun-2002 Rev. A Page 5 of 9 N-Channel http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics Fig 11. Forward Characteristics of Reverse Diode Fig 12. Gate Threshold Voltage v.s. Junction Temperature Elektronische Bauelemente SSG 4501 N Channel 7A, 30V,RDS(ON) 28m Enhancement Mode Power Mos.FET P Channel -5.3A, -30V,RDS(ON) 5 0m Ω Ω |
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