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SSG9975 데이터시트(PDF) 3 Page - SeCoS Halbleitertechnologie GmbH |
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SSG9975 데이터시트(HTML) 3 Page - SeCoS Halbleitertechnologie GmbH |
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3 / 4 page ![]() 01-Jun-2002 Rev. A Page 3 of 4 http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual Characteristics Curve Fig 6. Gate Threshold Voltage v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Elektronische Bauelemente SSG9975 7.6A, 60V,RDS(ON) 21m N-Channel Enhancement Mode Power Mos.FET Ω |
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