SSM2310 datasheet(1/4 Pages) SECOS

부품명	SSM2310

상세설명	N-Channel Enhancement Mode Power Mos.FET

PDF	4 Pages

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제조업체	SECOS [SeCoS Halbleitertechnologie GmbH]

홈페이지	http://www.secosgmbh.com

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Elektronische Bauelemente

SSM2310

3A, 60V,RDS(ON) 90m

N-Channel Enhancement Mode Power Mos.FET

Ω

Description

The SSM2310 utilized advanced processing techniques to

achieve the lowest possible on-resistance, extremely

Features

* Simple Drive Requirement

* Small Package Outline

efficient and cost-effectiveness device.

The SSM2310 is universally used for all commercial-

industrial surface mount applications.

Absolute Maximum Ratings

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current, VGS @4.5V

Pulsed Drain Current

Total Power Dissipation

Linear Derating Factor

Operating Junction and Storage Temperature Range

Thermal Resistance Junction-ambient

A

V

A

ID@TA=70

/W

C

W/ C

C

W

VDS

VGS

ID@TA=25

IDM

PD@TA=25

Tj, Tstg

Rthj-a

60

±20

10

3.0

2.3

2.7

0.02

-55~+150

45

Parameter

Symbol

Ratings

Unit

Parameter

Symbol

Ratings

Unit

3

1,2

Max.

o

C

o

C

o

C

o

http://www.SeCoSGmbH.com/

Any changing of specification will not be informed individual

SOT-223

01-Jun-2002 Rev. A

Page 1 of 4

Thermal Data

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

6.70

7.30

B

13°TYP.

C

2.90

3.10

J

2.30 REF.

D

0.02

0.10

1

6.30

6.70

E

0°

10°

2

6.30

6.70

I

0.60

0.80

3

3.30

3.70

H

0.25

0.35

4

3.30

3.70

5

1.40

1.80

S

D

G

2 3 1 0

DateCode

S

D

G

RoHS Compliant Product

유사한 부품 번호 - SSM2310

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Silicon Standard Corp.	SSM2310GN	505Kb / 5P	N-channel Enhancement-mode Power MOSFET
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SSM2310 데이터시트(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

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