Excelics

EFA080A

DATA SHEET

Low Distortion GaAs Power FET

•

+26.0dBm TYPICAL OUTPUT POWER

•

10.0dB TYPICAL POWER GAIN AT 12GHz

•

0.3 X 800 MICRON RECESSED “MUSHROOM” GATE

•

•

ADVANCED EPITAXIAL DOPING PROFILE

PROVIDES HIGH POWER EFFICIENCY,

LINEARITY AND RELIABILITY

•

Idss SORTED IN 15mA PER BIN RANGE

SYMBOLS

PARAMETERS/TEST CONDITIONS

MIN

TYP

MAX

UNIT

Output Power at 1dB Compression

f=12GHz

Vds=8V, Ids=50% Idss

f=18GHz

24.0

26.0

26.0

dBm

Gain at 1dB Compression

f=12GHz

Vds=8V, Ids=50% Idss

f=18GHz

8.0

10.0

7.5

dB

PAE

Power Added Efficiency at 1dB Compression

Vds=8V, Ids=50% Idss

f=12GHz

35

%

Idss

Saturated Drain Current

Vds=3V, Vgs=0V

130

210

300

mA

Gm

Transconductance

Vds=3V, Vgs=0V

90

120

mS

Vp

Pinch-off Voltage

Vds=3V, Ids=2.0mA

-2.0

-3.5

V

BVgd

Drain Breakdown Voltage Igd=1.0mA

-12

-15

V

BVgs

Source Breakdown Voltage Igs=1.0mA

-7

-14

V

Rth

Thermal Resistance (Au-Sn Eutectic Attach)

55

MAXIMUM RATINGS AT 25

SYMBOLS

PARAMETERS

ABSOLUTE

1

CONTINUOUS

2

Vds

Drain-Source Voltage

12V

8V

Vgs

Gate-Source Voltage

-8V

-4V

Ids

Drain Current

Idss

260mA

Igsf

Forward Gate Current

20mA

4mA

Pin

Input Power

25dBm

@ 3dB Compression

Tch

Channel Temperature

175

150

Tstg

Storage Temperature

-65/175

-65/150

Pt

Total Power Dissipation

2.5 W

2.1 W

Note: 1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054

Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com

Chip Thickness: 75

± 13 microns

All Dimensions In Microns

50

48

100

50

95

40

340

510

116

80

D

D

G

G

S

SS