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RFMA0912-2W 데이터시트(PDF) 1 Page - Excelics Semiconductor, Inc.

부품명 RFMA0912-2W
상세설명  9.50 - 11.70 GHz Power Amplifier MMIC
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제조업체  EXCELICS [Excelics Semiconductor, Inc.]
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RFMA0912-2W 데이터시트(HTML) 1 Page - Excelics Semiconductor, Inc.

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RFMA0912-2W
UPDATED 10/05/2007
9.50 – 11.70 GHz Power Amplifier MMIC
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 2
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
Revised October 2007
RFMA0912
Excelics
-2W
FEATURES
•
9.50– 11.70GHz Operating Frequency Range
•
32.5dBm Output Power at 1dB Compression
•
30.0 dB Typical Power Gain @ 1dB Gain Compression
•
-41dBc Typical OIM3 @ each tone Pout 21.5dBm
APPLICATIONS
•
Point-to-point and point-to-multipoint radio
•
Military Radar Systems
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (Ta = 25 °C, 50 ohm, Vdd=7V, Vgg=-5V)
SYMBOL
PARAMETER/TEST CONDITIONS
MIN
TYP
MAX
UNITS
F
Operating Frequency Range
9.50
11.70
GHz
P1dB
Output Power at 1dB Gain Compression
31.5
32.5
dBm
G1dB
Gain @ 1dB gain compression
27.0
30.0
dB
OIMD3
Output 3
rd Order Intermodulation Distortion
@∆f=10MHz, Each Tone Pout 21.5dBm
-41
-38
dBc
Input RL
Input Return Loss
-12
-8
dB
Output RL
Output Return Loss
-15
-10
dB
Idd
Drain Current
1900
2150
mA
Vdd
Drain Voltage
7
8
V
Vgg
Gate Voltage
-5
V
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
4.0
4.5
oC/W
Tb
Operating Base Plate Temperature
-30
+80
ºC
MAXIMUM RATINGS @25°C
SYMBOL
CHARACTERISTIC
ABSOLUTE
CONTINUOUS
1,2
VDD
Drain Supply Voltage
12V
8V
VGG
Gate Supply Voltage
-8V
-3V
IDD
Drain Current
Idss
3.6A
IGG
Gate Current
240mA
40mA
PIN
Input Power
20dBm
@ 3dB compression
TCH
Channel Temperature
175°C
150°C
TSTG
Storage Temperature
-65/175°C
-65/150°C
PT
Total Power Dissipation
30.0W
25.2W
1. Operating the device beyond any of the above rating may result in permanent damage.
2. Bias conditions must also satisfy the following equation Vdd*Idd < (TCH –Tb)/RTH; where Tb = operating base plate temperature


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