 |
전자부품 데이터시트 검색엔진 |
|
|
전자부품 데이터시트 검색엔진 |
|
7P20-TN3-R 데이터시트(PDF) 3 Page - Unisonic Technologies |
|
|
|||||||||||||||||||||||||||||
7P20-TN3-R 데이터시트(HTML) 3 Page - Unisonic Technologies |
|
|
3 / 6 page  7P20 Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 6 www.unisonic.com.tw QW-R502-288.a ELECTRICAL CHARACTERISTICS (Cont.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage VSD IS=-5.7A, VGS=0V -5.0 V Maximum Body-Diode Continuous Current IS -5.7 A Maximum Pulsed Drain-Source Diode Forward Current ISM -22.8 A Body Diode Reverse Recovery Time tRR 180 ns Body Diode Reverse Recovery Charge QRR VGS=0V, IS=-7.30 A dIF/dt=100A/s (Note 1) 1.07 µC Note: 1. Pulse Test : Pulse width≦300μs, Duty cycle≦2% Note: 2. Essentially independent of operating temperature |
|
|
링크 URL |
| ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크 투 데이터시트 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Korean ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
