DB92545m-AAS/A1

PARAMETER

MIN TYP MAX UNITS

TEST CONDITION

Input

Forward Voltage (V

1.0

1.15

1.3

V

I

Reverse Voltage (V

5

V

I

Reverse Current (I

10

µA

V

Output

Collector-emitter Breakdown (BV

80

V

I

( Note 2 )

Emitter-collector Breakdown (BV

6

V

I

Collector-emitter Dark Current (I

100

nA

V

Coupled

Current Transfer Ratio (CTR) (Note 2)

TLP321, TLP321-2, TLP321-4

50

600

%

5mA I

CTR selection available

GB

100

600

%

BL

200

600

%

GB

30

%

1mA I

Collector-emitter Saturation VoltageV

CE (SAT)

0.4

V

8mA I

GB

0.4

V

1mA I

Input to Output Isolation Voltage V

ISO

5300

V

RMS

See note 1

7500

V

PK

Input-output Isolation Resistance R

ISO

Ω

V

Rise Time

tr

2

µs

V

Fall Time

tf

3

µs

I

Turn-on Time

ton

3

µs

Turn-off Time

toff

3

µs

Note 1

Measured with input leads shorted together and output leads shorted together.

Note 2

Special Selections are available on request. Please consult the factory.

7/12/00

ELECTRICAL CHARACTERISTICS ( T

ABSOLUTE MAXIMUM RATINGS

(25°C unless otherwise specified)

Storage Temperature

-55°C to + 125°C

Operating Temperature

-55°C to + 100°C

Lead Soldering Temperature

(1/16 inch (1.6mm) from case for 10 secs)

260°C

INPUT DIODE

Forward Current

50mA

Reverse Voltage

6V

Power Dissipation

70mW

OUTPUT TRANSISTOR

Collector-emitter Voltage BV

CEO

80V

Emitter-collector Voltage BV

ECO

6V

Power Dissipation

150mW

POWER DISSIPATION

Total Power Dissipation

200mW

(derate linearly 2.67mW/°C above 25°C)