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GFCC40 데이터시트(PDF) 1 Page - Gunter Seniconductor GmbH. |
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GFCC40 데이터시트(HTML) 1 Page - Gunter Seniconductor GmbH. |
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1 / 1 page ![]() Gunter Semiconductor GmbH Gunter Semiconductor GmbH Gunter Semiconductor GmbH Gunter Semiconductor GmbH GFCC40 N Channel Power MOSFET Chip Specification General Description: * Advanced Process Technology * Dynamic dV/dt Rating * 150℃ ℃ ℃ ℃ Operating Temperature * Fast Switching * Fully Avalanche Rated Mechanical Data: D22 Dimension 4.32 mm x 5.76mm Thickness: 400 µµµµm Metallization: Top : : Al Backside : CrNiAg / Au Suggested Bonding Conditions: Die Mounting: Solder Perform 95/5 PbSn or 92.5./2.5/5 PbAgIn Source Bonding Wire: 12 mil Al Absolute Maximum Rating @Ta=25℃ ℃ ℃ ℃ Characteristics Symbol Limit Unit Test Conditions Drain-to-Source Breakdown Voltage V(BR)DSS 600 V VGS=0V, ID=250 µΑ Static Drain-to - Source On-resistance RDS(ON) 1.2 Ω VGS=10V, ID=3.7 Α Continuous Drain current ( in target package) ID@25℃ 6.2 A VGS=10V Continuous Drain current ( in target package) ID@100℃ 3.9 A VGS=10V Operation Junction Tj -55~150 ℃ Storage Temperature TSTR -55~150 ℃ Target Device: IRFBC40 TO-220AB PD 125 W @Tc=25℃ |
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