BC337,-16,-25,-40 BC338,-16,-25,-40

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Characteristic

Symbol

Min

Typ

Max

Unit

ON CHARACTERISTICS

DC Current Gain

(IC = 100 mA, VCE = 1.0 V)

BC337/BC338

BC337–16/BC338–16

BC337–25/BC338–25

BC337–40/BC338–40

(IC = 300 mA, VCE = 1.0 V)

hFE

100

100

160

250

60

—

—

—

—

—

630

250

400

630

—

—

Base–Emitter On Voltage

(IC = 300 mA, VCE = 1.0 V)

VBE(on)

—

—

1.2

Vdc

Collector – Emitter Saturation Voltage

(IC = 500 mA, IB = 50 mA)

VCE(sat)

—

—

0.7

Vdc

SMALL–SIGNAL CHARACTERISTICS

Output Capacitance

(VCB = 10 V, IE = 0, f = 1.0 MHz)

Cob

—

15

—

pF

Current – Gain — Bandwidth Product

(IC = 10 mA, VCE = 5.0 V, f = 100 MHz)

fT

—

210

—

MHz

Figure 1. Thermal Response

t, TIME (SECONDS)

0.001

0.002

0.005

0.01

0.02

0.05

0.1

0.2

0.5

1.0

2.0

5.0

10

20

50

100

0.01

0.02

0.03

0.05

0.07

0.1

0.2

0.3

0.5

0.7

1.0

D = 0.5

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

θJC(t) = (t) θJC

θJC = 100°C/W MAX

θJA(t) = r(t) θJA

θJA = 375°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) – TC = P(pk) θJC(t)

t1

t2

P(pk)

DUTY CYCLE, D = t1/t2

SINGLE PULSE

CURRENT LIMIT

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

1.0 ms

1.0 s

TJ = 135°C

TA = 25°C

TC = 25°C

dc

dc

(APPLIES BELOW RATED VCEO)

1000

10

100

1.0

3.0

10

30

VCE, COLLECTOR–EMITTER VOLTAGE

Figure 2. Active Region — Safe Operating Area

IC, COLLECTOR CURRENT (AMP)

Figure 3. DC Current Gain

100

1000

10

1000

0.1

10

100

100

1.0

TJ = 135°C

100

µs

VCE = 1 V

TJ = 25°C