1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

High Voltage

Darlington Transistors

NPN Silicon

MAXIMUM RATINGS

Rating

Symbol

BC372

BC373

Unit

Collector – Emitter Voltage

VCES

100

80

Vdc

Collector – Base Voltage

VCBO

100

80

Vdc

Emitter – Base Voltage

VEBO

12

Vdc

Collector Current — Continuous

IC

1.0

Adc

Total Device Dissipation @ TA = 25°C

Derate above 25

°C

PD

625

5.0

mW

mW/

°C

Total Device Dissipation @ TC = 25°C

Derate above 25

°C

PD

1.5

12

Watt

mW/

°C

Operating and Storage Junction

Temperature Range

TJ, Tstg

–55 to +150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Ambient

RqJA

200

°C/W

Thermal Resistance, Junction to Case

RqJC

83.3

°C/W

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector – Emitter Breakdown Voltage(1)

(IC = 100 mAdc, IB = 0)

BC372

BC373

V(BR)CES

100

80

—

—

—

—

Vdc

Collector – Base Breakdown Voltage

(IC = 100 mAdc, IE = 0)

BC372

BC373

V(BR)CBO

100

80

—

—

—

—

Vdc

Emitter – Base Breakdown Voltage

(IE = 10 mAdc, IC = 0)

V(BR)EBO

12

—

—

Vdc

Collector Cutoff Current

(VCB = 80 Vdc, IE = 0)

BC372

(VCB = 60 Vdc, IE = 0)

BC373

ICBO

—

—

—

—

100

100

nAdc

Emitter Cutoff Current

(VEB = 10 V, IC = 0)

IEBO

—

—

100

nAdc

1. Pulse Test: Pulse Width = 300

ms, Duty Cycle 2.0%.

Order this document

by BC372/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

BC372

BC373

CASE 29–04, STYLE 1

TO–92 (TO–226AA)

1

2

3

COLLECTOR 3

BASE

2

EMITTER 1